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Scanning force microscopy for the study of domain structure in ferroelectric thin films

机译:扫描力显微镜研究铁电薄膜的畴结构

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摘要

A piezoresponse technique based on scanning force microscopy (SFM) has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zrx,Ti1-x)O3(PZT) thin films produced by a sol–gel method. The piezoresponse images of the PZT films were taken before and after inducing polarization in the films by applying a direct current voltage between the bottom electrode and the SFM tip. Polarization induced patterns were written with 20 V pulses and subsequently imaged by the SFM piezoresponse technique. The effect of the film structure on the imaging resolution of domains is discussed.
机译:基于扫描力显微镜(SFM)的压电响应技术已用于研究铁电薄膜中的畴结构。对通过溶胶-凝胶法生产的Pb(Zrx,Ti1-x)O3(PZT)薄膜进行了研究。通过在底部电极和SFM尖端之间施加直流电压,在薄膜极化之前和之后拍摄PZT薄膜的压电响应图像。用20 V脉冲写入极化感应的图案,然后通过SFM压电响应技术进行成像。讨论了膜结构对畴成像分辨率的影响。

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